NGD8201NT4G
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 440 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±15 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
更新于 2025-03-06IKP01N120H2
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IGP01N120H2XKSA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IGP01N120H2
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IGB01N120H2ATMA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
HGTD1N120BNS9A
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 5.3 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IGB01N120H2
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
IGD01N120H2
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
HGTG11N120CND
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 43 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
DF6D7M1N,LF
电气特性 Features
| Type: | Diode Arrays |
| Configuration: | Dual |
| Pin Count: | 6 |
| Direction Type: | Uni-Directional |
| Maximum Clamping Voltage: | 12(Typ) V |
| Number of Elements per Chip: | 2 |
| ESD Protection Voltage: | ±8@Contact Disc kV |
| Maximum Working Voltage: | 5 V |
| Maximum Leakage Current: | 0.5 uA |
| Capacitance Value: | 0.5 pF |
| Minimum Operating Temperature: | -55 ℃ |
| Maximum Operating Temperature: | 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
DF10G7M1N,LF
电气特性 Features
| Type: | Diode Arrays |
| Configuration: | Quad |
| Pin Count: | 10 |
| Direction Type: | Uni-Directional |
| Maximum Clamping Voltage: | 12(Typ) V |
| Number of Elements per Chip: | 4 |
| ESD Protection Voltage: | ±8@Contact Disc kV |
| Maximum Working Voltage: | 5 V |
| Maximum Leakage Current: | 0.5 uA |
| Capacitance Value: | 0.5 pF |
| Minimum Operating Temperature: | -55 ℃ |
| Maximum Operating Temperature: | 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
SZESD8451N2T5G
电气特性 Features
| Type: | TVS |
| Configuration: | Single |
| Pin Count: | 2 |
| Direction Type: | Bi-Directional |
| Maximum Clamping Voltage: | 16(Typ) V |
| Number of Elements per Chip: | 1 |
| ESD Protection Voltage: | ±15@Air Gap|±15@Contact Disc kV |
| Maximum Working Voltage: | 3.3 V |
| Maximum Leakage Current: | 0.5 uA |
| Capacitance Value: | 0.3 pF |
| Minimum Operating Temperature: | -55 ℃ |
| Maximum Operating Temperature: | 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
SZESD7471N2T5G
电气特性 Features
| Type: | TVS |
| Configuration: | Single |
| Pin Count: | 2 |
| Direction Type: | Bi-Directional |
| Maximum Clamping Voltage: | 15 V |
| Number of Elements per Chip: | 1 |
| ESD Protection Voltage: | 20 kV |
| Maximum Working Voltage: | 5.3 V |
| Maximum Leakage Current: | 0.05 uA |
| Capacitance Value: | 0.35 pF |
| Minimum Operating Temperature: | -55 ℃ |
| Maximum Operating Temperature: | 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
SZESD7451N2T5G
电气特性 Features
| Type: | TVS |
| Configuration: | Single |
| Pin Count: | 2 |
| Direction Type: | Bi-Directional |
| Maximum Clamping Voltage: | 13 V |
| Number of Elements per Chip: | 1 |
| ESD Protection Voltage: | ±25@Air Gap|±25@Contact Disc kV |
| Maximum Working Voltage: | 3.3 V |
| Maximum Leakage Current: | 0.05 uA |
| Capacitance Value: | 0.35 pF |
| Minimum Operating Temperature: | -55 ℃ |
| Maximum Operating Temperature: | 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |