更新于 2025-03-06
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IGP01N120H2
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 42A,Vce(ON)@25℃(typ): 2.97V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 10A,Vce(ON)@25℃(typ): 1.70V
- 高速(1-8kHz)IGBT模块,Vces: 600V,Ic@100℃: 60A,Vce(ON)@25℃(typ): 1.50V
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 23 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |