更新于 2025-03-06电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 23.0mΩ
- Id: 98A
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- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 6.5mΩ,Id: 110A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 8.0mΩ,Id: 110A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 30V,RDS(on) Max@10V: 54.0mΩ,Id: 44A
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Dual Common Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 150(Min) V |
| Maximum Gate Source Voltage: | 3 V |
| Operating Temperature: | -65 to 250 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |