更新于 2025-03-06电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 9.0mΩ
- Id: 97A
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- N沟道功率MOS管,Vbrdss: 80V,Vgs: 20V,RDS(on) Max@10V: 15.0mΩ
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 3.5mΩ,Id: 124A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 20V,RDS(on) Max@10V: 72.5mΩ,Id: 25A
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5 V |
| Maximum Continuous Drain Current: | 120 mA |
| Maximum Gate Source Voltage: | 1 V |
| Maximum Drain Gate Voltage: | 5 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 1200 V |
| Maximum Continuous Drain Current: | 0.035 mA |
| Maximum Gate Source Voltage: | 2 V |
| Operating Temperature: | -55 to 175 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |