更新于 2025-03-07电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 650V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.70V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 650V,Vce(ON)@25℃(typ): 1.7V
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 24A,Vce(ON)@25℃(typ): 2.43V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 50A,Vce(ON)@25℃(typ): 1.60V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 390 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±15 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1300 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±25 V |
| Mounting: | Through Hole |
| Rad Hard: | No |