首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 IRG8P08N120KDPBF IRG8P08N120KDPBF 更新于 2026-08-05 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:15 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-40 to 150 ℃Rad Hard:No