首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 NGTG12N60TF1G NGTG12N60TF1G 更新于 2026-03-07 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:24 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-55 to 150 ℃Rad Hard:No