达林顿管

MJF6388G

MJF6388G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:100@10A@3V|1000@5A@3V|200@8A@4V|3000@3A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A|2@0.01A@5A|3@0.1A@10A V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

TIP147T

TIP147T

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

FZT605TA

FZT605TA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:2000@50mA@5V|5000@500mA@5V|2000@1A@5V|500@2A@5V
Maximum Collector Emitter Saturation Voltage:1@0.25mA@250mA|1.5@1mA@1A V
Maximum Collector Base Voltage:140 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

TD62083AFG(O,N)

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

ULN2003AFWG(ONEHZA)

ULN2003AFWG(ONEHZA)

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

ULN2003AS16-13

ULN2003AS16-13

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Operating Temperature:-40 to 105 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

PZTA14

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    PZTA14内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-11-07 Tag标签:达林顿管

TIP132

TIP132

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@30mA@6A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

BCP49H6327XTSA1

BCP49H6327XTSA1

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

ULQ2802A

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

ULN2803APG(O,N,HZA)

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Operating Temperature:-40 to 85 ℃
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

BU931T

BU931T

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:400 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:300@5A@10V
Maximum Collector Emitter Saturation Voltage:1.6@70mA@7A|1.8@100mA@8A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

ULN2004ANSR

ULN2004ANSR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

MJ11012G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:30 A
Minimum DC Current Gain:200@30A@5V|1000@20A@5V
Maximum Collector Emitter Saturation Voltage:3@200mA@20A|4@300mA@30A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

BCV27 E6327

BCV27 E6327

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@0.1mA@1V|10000@10mA@5V|20000@100mA@5V|2000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
达林顿管 更新于 2025-11-07 Tag标签:达林顿管