达林顿管

MJD128T4G

MJD128T4G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:120 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ZTX601

ZTX601

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:160 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@50mA@10V|2000@500mA@10V|1000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:180 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MJD122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-08 Tag标签:达林顿管

BCV27

BCV27

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BCV27内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-08 Tag标签:达林顿管

TIP125

TIP125

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

BSP51E6327

BSP51E6327

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A|1.3@0.5mA@500mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

SMMBTA14LT3G

SMMBTA14LT3G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:10000@10mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ZTX601STZ

ZTX601STZ

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:160 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@50mA@10V|2000@500mA@10V|1000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:180 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

TD62003APG(O,N)

TD62003APG(O,N)

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULN2004ANE4

ULN2004ANE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULQ2004ATDRQ1

ULQ2004ATDRQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@0.25mA@0.1A|1.3@0.35mA@0.2A|1.6@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULN2003AINSR

ULN2003AINSR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MJF6388G

MJF6388G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:100@10A@3V|1000@5A@3V|200@8A@4V|3000@3A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A|2@0.01A@5A|3@0.1A@10A V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

NJVMJD122T4G

NJVMJD122T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

2SB852KT146B

2SB852KT146B

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:32 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:5000@0.1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.4mA@200mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管