达林顿管

TIP102

TIP102

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

ULN2003APWR

ULN2003APWR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

TIP147G

TIP147G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

TIP141G

TIP141G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

BDW42G

BDW42G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:250@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@50mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

MJE5742G

MJE5742G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:400 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:200@4A@5V|50@500mA@5V
Maximum Collector Emitter Saturation Voltage:2@0.2A@4A|3@0.4A@8A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

2N6284G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

ULN2003AIPWE4

ULN2003AIPWE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

MPSW45G

MPSW45G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:25000@200mA@5V|15000@500mA@5V|4000@1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@2mA@1A V
Maximum Collector Base Voltage:50 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

FCX705TA

FCX705TA

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:3000@10mA@5V|3000@100mA@5V|3000@1A@5V|2000@2A@5V
Maximum Collector Emitter Saturation Voltage:1.3@1mA@1A|2.5@2mA@2A V
Maximum Collector Base Voltage:140 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

BCV47E6433

BCV47E6433

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.5A@5V|10000@100mA@5V|4000@10mA@5V|2000@0.1mA@1V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

PZTA64

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    PZTA64内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-11-07 Tag标签:达林顿管

2N6286G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

MJD117T4

MJD117T4

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管

2SD1383KT146B

2SD1383KT146B

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:32 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:5000@0.1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.4mA@200mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-11-07 Tag标签:达林顿管