达林顿管

TIPP117-R-S

TIPP117-R-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BDX34C

BDX34C

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@6mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULN2004D1013TR

ULN2004D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BSP52T3G

BSP52T3G

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BDW93-S

BDW93-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@3A@3V|750@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@20mA@5A|3@100mA@10A V
Maximum Collector Base Voltage:45 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

TD62064APG(O,J,S)

TD62064APG(O,J,S)

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:800(Typ)@1A@2V|1500(Typ)@0.25A@2V
Maximum Collector Emitter Saturation Voltage:1.6@2mA@1.25A|1.25@935uA@0.75A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

TD62783APG(O,S,HZN)

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:2@350mA|1.9@225mA|1.8@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BCV47 E6327

BCV47 E6327

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.5A@5V|10000@100mA@5V|4000@10mA@5V|2000@0.1mA@1V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

2N6059

2N6059

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:750@6A@3V|100@12A@3V
Maximum Collector Emitter Saturation Voltage:2@24mA@6A|3@120mA@12A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

MJD44E3T4G

MJD44E3T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@5V
Maximum Collector Emitter Saturation Voltage:1.5@10mA@5A|2@20mA@10A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

MJD122TF

MJD122TF

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULQ2804A

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BST52

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BST52内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BDX43

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA|1.6@1mA@1A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

KSP13BU

KSP13BU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管