达林顿管

BST52,135

BST52,135

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ULN2004ADRE4

ULN2004ADRE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

TIP112

TIP112

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

PMBTA13,215

PMBTA13,215

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BSP51E6327

BSP51E6327

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A|1.3@0.5mA@500mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BCX38CSTZ

BCX38CSTZ

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:5000@100mA@5V|10000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.25@8mA@800mA V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ULN2004D1

ULN2004D1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MJD127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-05 Tag标签:达林顿管

FZT7053TA

FZT7053TA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:10000@100mA@5V|1000@1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ULN2003LVDR

ULN2003LVDR

电气特性 Features

  • 三极管,达林顿管
  • Trans Darlington
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BDX53BG

BDX53BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MJD6039T4G

MJD6039T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

SN75468DE4

SN75468DE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MPSW45AZL1G

MPSW45AZL1G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:25000@200mA@5V|15000@500mA@5V|4000@1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@2mA@1A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MMBTA13LT3G

MMBTA13LT3G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管