达林顿管

JANTX2N6058

JANTX2N6058

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@1A@3V|1000@6A@3V|150@12A@3V
Maximum Collector Emitter Saturation Voltage:3@120mA@12A|2@24mA@6A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

BSP51,115

BSP51,115

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

MJD44E3T4G

MJD44E3T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@5V
Maximum Collector Emitter Saturation Voltage:1.5@10mA@5A|2@20mA@10A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

DS2003CM/NOPB

DS2003CM/NOPB

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:55 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

ULN2004APG(O,N,M)

ULN2004APG(O,N,M)

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

BCV27 E6327

BCV27 E6327

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@0.1mA@1V|10000@10mA@5V|20000@100mA@5V|2000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

BDX33A-S

BDX33A-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

MJE5742G

MJE5742G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:400 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:200@4A@5V|50@500mA@5V
Maximum Collector Emitter Saturation Voltage:2@0.2A@4A|3@0.4A@8A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

BST52

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BST52内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-11 Tag标签:达林顿管

TIP120

TIP120

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

TIP110TU

TIP110TU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

ULQ2001D1013TR

ULQ2001D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

ULN2003BDR

ULN2003BDR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Operating Temperature:-40 to 105 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

KSH117TF

KSH117TF

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管

FMMTA14TA

FMMTA14TA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:0.9@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-11 Tag标签:达林顿管