达林顿管

MJD127T4

MJD127T4

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

MJB5742T4G

MJB5742T4G

电气特性 Features

Configuration:Single
Type:NPN
Peak DC Collector Current:8 A
Minimum DC Current Gain:50@0.5A@5V|200@4A@5V
Maximum Collector Emitter Saturation Voltage:2@0.2A@4A|3@0.4A@8A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

TIP127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BD897-S

BD897-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@12mA@3A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BCV48H6327XTSA1

BCV48H6327XTSA1

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BCV27,215

BCV27,215

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@1mA@5V|10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

SN75469NE4

SN75469NE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BSP61H6327XTSA1

BSP61H6327XTSA1

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

FMMT634TA

FMMT634TA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.9 A
Minimum DC Current Gain:20000@100mA@5V|15000@1A@5V|5000@2A@5V
Maximum Collector Emitter Saturation Voltage:0.96@5mA@1A|0.75@1mA@100mA|0.8@1mA@250mA|0.85@5mA@500mA|0.93@5mA@900mA V
Maximum Collector Base Voltage:120 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

MJD117

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD117内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BDX54C-S

BDX54C-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

ULN2003ADRE4

ULN2003ADRE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BCP49H6327XTSA1

BCP49H6327XTSA1

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

ULN2004APG(O,N,M)

ULN2004APG(O,N,M)

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

MPSA14

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MPSA14内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-08-07 Tag标签:达林顿管