BD645-S

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电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:	2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:	100 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	160 V
Peak DC Collector Current:	1 A
Minimum DC Current Gain:	1000@50mA@10V|2000@500mA@10V|1000@1A@10V
Maximum Collector Emitter Saturation Voltage:	1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:	180 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	10 A
Minimum DC Current Gain:	750@3A@3V
Maximum Collector Emitter Saturation Voltage:	2.5@6mA@3A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	750@3A@3V
Maximum Collector Emitter Saturation Voltage:	2@12mA@3A V
Maximum Collector Base Voltage:	100 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	40 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	20000@10mA@5V|30000@100mA@5V|20000@500mA@5V
Maximum Collector Emitter Saturation Voltage:	1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:	40 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10