达林顿管

ULQ2003ATDQ1

ULQ2003ATDQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@0.25mA@0.1A|1.4@0.35mA@0.2A|1.7@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULQ2003AN

ULQ2003AN

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@100mA|1.4@200mA|1.7@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

TIP120

TIP120

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MPSA13ZL1G

MPSA13ZL1G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MJH11021G

MJH11021G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:250 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V|400@10A@5V
Maximum Collector Emitter Saturation Voltage:2.5@100mA@10A|4@150mA@15A V
Maximum Collector Base Voltage:250 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULN2003ADRG4

ULN2003ADRG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ZTX603STZ

ZTX603STZ

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:2000@50mA@5V|5000@500mA@5V|2000@1A@5V|500@2A@5V
Maximum Collector Emitter Saturation Voltage:1@0.4mA@400mA|1@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

BCV47

BCV47

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BCV47内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-08 Tag标签:达林顿管

BCV27 E6327

BCV27 E6327

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@0.1mA@1V|10000@10mA@5V|20000@100mA@5V|2000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

TIP127TU

TIP127TU

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MJD122T4

MJD122T4

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

TD62083AFNG(O,N,EL)

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

TIP131-S

TIP131-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|3@30mA@86A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

BD679

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

JANTX2N6058

JANTX2N6058

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@1A@3V|1000@6A@3V|150@12A@3V
Maximum Collector Emitter Saturation Voltage:3@120mA@12A|2@24mA@6A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管