达林顿管

BD647-S

BD647-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|2.5@50mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

BCV48H6327XTSA1

BCV48H6327XTSA1

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

ULN2075B

ULN2075B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

BDW93-S

BDW93-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@3A@3V|750@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@20mA@5A|3@100mA@10A V
Maximum Collector Base Voltage:45 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

TIP121G

TIP121G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

ULN2803AFWG(C,ELHA)

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

TIP110

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP110内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-03 Tag标签:达林顿管

BSP52

BSP52

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

SN75469DE4

SN75469DE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

2N6059

2N6059

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:750@6A@3V|100@12A@3V
Maximum Collector Emitter Saturation Voltage:2@24mA@6A|3@120mA@12A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

2N6043G

2N6043G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@8A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

BU941ZPFI

BU941ZPFI

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:300@5A@10V
Maximum Collector Emitter Saturation Voltage:1.8@100mA@8A|1.8@250mA@10A|2@300mA@12A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

ULQ2001D1013TR

ULQ2001D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管

MJD122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-03 Tag标签:达林顿管

E-ULN2003D1013TR

E-ULN2003D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-03 Tag标签:达林顿管