达林顿管

MMBTA14LT1HTSA1

MMBTA14LT1HTSA1

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

BDX53BG

BDX53BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

MPSA13G

MPSA13G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

TIP125-S

TIP125-S

电气特性 Features

  • 三极管,达林顿管
  • Trans Darlington PNP 60V 5A
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

MJH11017G

MJH11017G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:150 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V|400@10A@5V
Maximum Collector Emitter Saturation Voltage:2.5@100mA@10A|4@150mA@15A V
Maximum Collector Base Voltage:150 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

MJD127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-31 Tag标签:达林顿管

BDX54C

BDX54C

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

MMBTA64LT1G

MMBTA64LT1G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

BDX54-S

BDX54-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:45 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

NJD35N04G

NJD35N04G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:2000@2A@2V|300@4A@2V
Maximum Collector Emitter Saturation Voltage:1.5@20mA@2A V
Maximum Collector Base Voltage:700 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

TIP137

TIP137

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@30mA@6A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

A2982SLW-T

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.8@100mA|1.9@225mA|2@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

MJE703G

MJE703G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

FW26025A1

FW26025A1

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:5000@2A@3V|750@10A@3V|200@30A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管

FZT600TA

FZT600TA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:140 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@50mA@10V|2000@500mA@10V|1000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:160 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-31 Tag标签:达林顿管