达林顿管

MJE5742G

MJE5742G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:400 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:200@4A@5V|50@500mA@5V
Maximum Collector Emitter Saturation Voltage:2@0.2A@4A|3@0.4A@8A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

MJD128T4G

MJD128T4G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:120 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BDV65BG

BDV65BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@0.02A@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

MJD122-1

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:100@8A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BD645-S

BD645-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|2.5@50mA@5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULN2804APG,N

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Operating Temperature:-40 to 85 ℃
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BD677

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULQ2002A

ULQ2002A

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULN2003ANSRG4

ULN2003ANSRG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BCV26E6327HTSA1

BCV26E6327HTSA1

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@100uA@1V|10000@10mA@5V|20000@100mA@5V|4000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

MC1413PG

MC1413PG

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BST61,115

BST61,115

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

TIP127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BU941ZPFI

BU941ZPFI

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:300@5A@10V
Maximum Collector Emitter Saturation Voltage:1.8@100mA@8A|1.8@250mA@10A|2@300mA@12A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

NJVMJD117T4G

NJVMJD117T4G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管