达林顿管

2N6059

2N6059

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:750@6A@3V|100@12A@3V
Maximum Collector Emitter Saturation Voltage:2@24mA@6A|3@120mA@12A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

ULN2003LVDR

ULN2003LVDR

电气特性 Features

  • 三极管,达林顿管
  • Trans Darlington
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

ULQ2004ATDRQ1

ULQ2004ATDRQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@0.25mA@0.1A|1.3@0.35mA@0.2A|1.6@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

MMBT6427

MMBT6427

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

BDX34BG

BDX34BG

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@6mA@3A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

MJE803G

MJE803G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

BDX54B

BDX54B

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

TIP125G

TIP125G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

ZTX603STOA

ZTX603STOA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:2000@50mA@5V|5000@500mA@5V|2000@1A@5V|500@2A@5V
Maximum Collector Emitter Saturation Voltage:1@0.4mA@400mA|1@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

MJD117T4

MJD117T4

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

CZT122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    CZT122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-22 Tag标签:达林顿管

MJD127TF

MJD127TF

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@8A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

E-L6220

E-L6220

电气特性 Features

Configuration:Quad
Type:NPN
Peak DC Collector Current:1.8 A
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

BCV46E6327

BCV46E6327

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@500mA@5V|4000@10mA@5V|2000@100uA@1V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-07-22 Tag标签:达林顿管

BCV49E6327

BCV49E6327

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.1mA@1V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-22 Tag标签:达林顿管