达林顿管

ULN2003ADR

ULN2003ADR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MJB5742T4G

MJB5742T4G

电气特性 Features

Configuration:Single
Type:NPN
Peak DC Collector Current:8 A
Minimum DC Current Gain:50@0.5A@5V|200@4A@5V
Maximum Collector Emitter Saturation Voltage:2@0.2A@4A|3@0.4A@8A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BDX33A-S

BDX33A-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

2N6426RLRAG

2N6426RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:20000@10mA@5V|30000@100mA@5V|20000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BDX33C

BDX33C

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@4A|2.5@6mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BD676G

BD676G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Base Voltage:45 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ULN2803ADW

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

TIP122

TIP122

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BST52

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BST52内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ULN2003AS16-13

ULN2003AS16-13

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Operating Temperature:-40 to 105 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MPSA27G

MPSA27G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ZDT6702TA

电气特性 Features

Configuration:Dual Dual Collector
Type:NPN|PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1.75 A
Minimum DC Current Gain:5000@10mA@5V@NPN|5000@500mA@5V@NPN|3500@2A@5V@NPN|500@4A@5V@NPN|2000@10mA@5V@PNP|2000@500mA@5V@PNP|1500@2A@5V@PNP|1000@4A@5V@PNP
Maximum Collector Emitter Saturation Voltage:0.95@0.5mA@0.5A@NPN|1.28@2mA@1.75A@NPN|1@0.5mA@0.5A@PNP|1.28@2mA@1.75A@PNP V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MC1413DG

MC1413DG

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MC1413BDR2G

MC1413BDR2G

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

TIPP110-R-S

TIPP110-R-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管