达林顿管

2SD2142

2SD2142

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    2SD2142内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-30 Tag标签:达林顿管

TIP152-S

TIP152-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:400 V
Peak DC Collector Current:7 A
Minimum DC Current Gain:150@2.5A@5V|50@5A@5V|15@7A@5V
Maximum Collector Emitter Saturation Voltage:1.5@10mA@1A|1.5@100mA@2A|2@250mA@5A V
Maximum Collector Base Voltage:400 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BDW93C

BDW93C

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@3A@3V|750@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@20mA@5A|3@100mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

TIP110

TIP110

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULN2804APG(O,NM)

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BD677AG

BD677AG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

TIP142TTU

TIP142TTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

NJVMJD112T4G

NJVMJD112T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

FZT692BTA

FZT692BTA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:70 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:500@100mA@2V|400@500mA@2V|150@1A@2V
Maximum Collector Emitter Saturation Voltage:0.15@0.5mA@0.1A|0.5@10mA@1A|0.5@200mA@2A V
Maximum Collector Base Voltage:70 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

BSP61H6327XTSA1

BSP61H6327XTSA1

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULN2003AN

ULN2003AN

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

STD901T

STD901T

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:500@4A@2V|1800@2A@2V
Maximum Collector Emitter Saturation Voltage:2@20mA@2A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

MMBTA13

MMBTA13

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MMBTA13内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULN2003ADG4

ULN2003ADG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管

ULQ2004ATDRQ1

ULQ2004ATDRQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@0.25mA@0.1A|1.3@0.35mA@0.2A|1.6@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-30 Tag标签:达林顿管