达林顿管

BDX53CG

BDX53CG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

2N6043G

2N6043G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@8A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

STD901T

STD901T

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:500@4A@2V|1800@2A@2V
Maximum Collector Emitter Saturation Voltage:2@20mA@2A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

TIP147G

TIP147G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

FZT705TC

FZT705TC

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:3000@10mA@5V|3000@100mA@5V|3000@1A@5V|2000@2A@5V
Maximum Collector Emitter Saturation Voltage:1.3@1mA@1A|2.5@2mA@2A V
Maximum Collector Base Voltage:140 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

TIP131-S

TIP131-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|3@30mA@86A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

FZT694BTA

FZT694BTA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:500@100mA@2V|400@200mA@2V|150@400mA@2V
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@100mA|0.5@5mA@400mA V
Maximum Collector Base Voltage:120 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

BSP50E6327

BSP50E6327

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A|1.3@0.5mA@500mA V
Maximum Collector Base Voltage:60 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

MJ11021G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:250 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V
Maximum Collector Emitter Saturation Voltage:2@100mA@10A|3.4@150mA@15A V
Maximum Collector Base Voltage:250 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

2SD1509Q

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:2000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

TIP142

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP142内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-05 Tag标签:达林顿管

PZTA14

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    PZTA14内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ULN2004D1013TR

ULN2004D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

2N6426RLRAG

2N6426RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:20000@10mA@5V|30000@100mA@5V|20000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管

ULN2003AIDRE4

ULN2003AIDRE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-05 Tag标签:达林顿管