ULN2003AD

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电气特性 Features

Configuration:	Array 7
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Maximum Collector Emitter Saturation Voltage:	1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Operating Temperature:	-40 to 105 ℃
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-17

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	10 A
Minimum DC Current Gain:	1000@5A@3V
Maximum Collector Emitter Saturation Voltage:	2@20mA@5A|4@50mA@10A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-17

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-09-17

电气特性 Features

Configuration:	Octal
Type:	NPN|PNP
Peak DC Collector Current:	0.5 A
Maximum Collector Emitter Saturation Voltage:	2@350mA|1.9@225mA|1.8@100mA V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-09-17

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	160 V
Peak DC Collector Current:	1 A
Minimum DC Current Gain:	1000@50mA@10V|2000@500mA@10V|1000@1A@10V
Maximum Collector Emitter Saturation Voltage:	1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:	180 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-17