MJD6039T4G

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电气特性 Features

Configuration:	Single Dual Collector
Type:	NPN
Maximum Collector Emitter Voltage:	60 V
Peak DC Collector Current:	1 A
Minimum DC Current Gain:	1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:	1.3@0.5mA@500mA V
Maximum Collector Base Voltage:	80 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	10 A
Minimum DC Current Gain:	1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:	2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:	100 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Array 7
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:	1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single Dual Collector
Type:	NPN
Maximum Collector Emitter Voltage:	60 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	2000@1mA@5V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Maximum Collector Emitter Saturation Voltage:	1@0.1mA@100mA V
Maximum Collector Base Voltage:	80 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	4 A
Minimum DC Current Gain:	750@2A@3V
Maximum Collector Emitter Saturation Voltage:	2.8@40mA@2A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10