搜索结果：1 相关的内容

2SB1201T-TL-E

2SB1201T-TL-E

电气特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:200@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:800 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1201T-E

2SB1201T-E

电气特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:200@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:800 mW
Mounting:Through Hole
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1201S-TL-E

2SB1201S-TL-E

电气特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:800 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1201S-E

2SB1201S-E

电气特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:800 mW
Mounting:Through Hole
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1143T

电气特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:4 A
Minimum DC Current Gain:200@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1500 mW
Mounting:Through Hole
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1143S

电气特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:4 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1500 mW
Mounting:Through Hole
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1124T-TD-H

电气特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:3 A
Minimum DC Current Gain:200@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1124T-TD-E

电气特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:3 A
Minimum DC Current Gain:200@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1124S-TD-H

电气特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:3 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1124S-TD-E

电气特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:3 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1123T-TD-E

电气特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:200@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1123S-TD-E

电气特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1122T-TD-E

电气特性 Features

  • 功率晶体管,Trans GP BJT PNP 50V 1A
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1122S-TD-E

电气特性 Features

Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum Collector Emitter Saturation Voltage:0.5@50mA@500mA V
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
功率晶体管 更新于 2026-08-27 搜索次数(0)

2SB1121T-TD-E

电气特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:25 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:200@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.6@75mA@1.5A V
Maximum Collector Base Voltage:30 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶体管 更新于 2026-08-27 搜索次数(0)