RJH1CV5DPQ-E0#T2

RJH1CV5DPQ-E0#T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

RJH1CM7DPQ-E0#T2

RJH1CM7DPQ-E0#T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

RJH1CM6DPQ-E0#T2

RJH1CM6DPQ-E0#T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

RJH1CM5DPQ-E0#T2

RJH1CM5DPQ-E0#T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

RJH1CF7RDPQ-80#T2

电气特性 Features

Configuration:Single
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:60 A
Mounting:Through Hole
Rad Hard:No

RJH1CD7DPQ-E0#T2

RJH1CD7DPQ-E0#T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

RJH1CD6DPQ-E0#T2

RJH1CD6DPQ-E0#T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

RJH1CD5DPQ-E0#T2

RJH1CD5DPQ-E0#T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

RJH1BF7RDPQ-80#T2

电气特性 Features

Configuration:Single
Maximum Collector Emitter Voltage:1100 V
Maximum Continuous Collector Current:60 A
Mounting:Through Hole
Rad Hard:No

RGTH80TS65DGC11

RGTH80TS65DGC11

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

RGTH60TS65GC11

RGTH60TS65GC11

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:58 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

RGTH60TS65DGC11

RGTH60TS65DGC11

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:58 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

RGTH50TS65GC11

RGTH50TS65GC11

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

RGTH50TS65DGC11

RGTH50TS65DGC11

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

RGTH40TS65GC11

RGTH40TS65GC11

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No