开关元件

VS-ST230S16P0PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:230 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.55@720A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

VS-ST180S12P0V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

TPDV1025RG

电气特性 Features

Type:Alternistor
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:50(Typ) mA
Surge Current Rating:390 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.8@35A V
Repetitive Peak Off-State Current:0.02 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:150 mA
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

VS-16TTS12PBF

VS-16TTS12PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:100 mA
Rated Average On-State Current:10 A
Surge Current Rating:200 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.4@10A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

TN1205T-600B-TR

TN1205T-600B-TR

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:15 mA
Rated Average On-State Current:8 A
Surge Current Rating:120 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

VS-40TPS12A-M3

VS-40TPS12A-M3

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:35 A
Surge Current Rating:600 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.85@110A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

VS-70TPS16PBF

VS-70TPS16PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:200 mA
Rated Average On-State Current:70 A
Surge Current Rating:1400 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.4@100A V
Repetitive Peak Off-State Current:1 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:100 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

TS110-8A2

TS110-8A2

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:700 V
Maximum Holding Current:12 mA
Rated Average On-State Current:1.25@Tl=53C A
Surge Current Rating:21 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@2.5V V
Maximum Gate Trigger Voltage:0.8 V
Maximum Gate Trigger Current:0.1 mA
Maximum Gate Peak Inverse Voltage:7.5(Min) V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

VS-ST173C10CFK0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:4900 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:2.07@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

TISP4380F3DS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:270 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:4 A
Repetitive Peak Forward Blocking Voltage:270 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

TN2540-800G-TR

TN2540-800G-TR

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:50 mA
Rated Average On-State Current:16 A
Surge Current Rating:314 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@50A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

VS-16RIA100

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:130 mA
Rated Average On-State Current:16 A
Surge Current Rating:360 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.75@50A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

VS-ST180S20P0PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

TISP4C025L1NR-S

TISP4C025L1NR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:16 V
Maximum Holding Current:50(Typ) mA
Repetitive Peak Forward Blocking Voltage:16 V
Repetitive Peak Off-State Current:0.001 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-28 Tag标签:可控硅(晶闸管)

MOC211M

MOC211M

电气特性 Features

  • 单通道光电晶体管输出光电耦合器,DC直流输入
  • 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-08-28 Tag标签:光电耦合器(光耦)