开关元件

FODM8061

电气特性 Features

  • 高抗干扰,3.3V/5V,10MBit/秒的逻辑门输出(集电极开路)光电耦合器
  • High Noise Immunity, 3.3V/5V, 10Mbit/sec Logic Gate Output (Open Collector) Optocoupler
  • Low Voltage, High Performance
光电耦合器(光耦) 更新于 2026-08-14 Tag标签:光电耦合器(光耦)

VS-VSKH91/16

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:250 mA
Rated Average On-State Current:95 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.73 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

MOC205M

MOC205M

电气特性 Features

  • 单通道光电晶体管输出光电耦合器,DC直流输入
  • 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-08-14 Tag标签:光电耦合器(光耦)

VS-25TTS12SPBF

VS-25TTS12SPBF

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:100 mA
Rated Average On-State Current:16 A
Surge Current Rating:350 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.25@16A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:45 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

VS-ST180C12C1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:350 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.96@750A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

TPP25011RL

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:250 V
Maximum Holding Current:180(Min) mA
Surge Current Rating:5 A
Repetitive Peak Forward Blocking Voltage:250 V
Repetitive Peak Off-State Current:0.006 mA
Maximum Gate Trigger Voltage:1.35 V
Maximum Gate Trigger Current:40 mA
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

TISP4350J1BJR-S

TISP4350J1BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:275 V
Maximum Holding Current:20(Min) mA
Surge Current Rating:100 A
Repetitive Peak Forward Blocking Voltage:275 V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

TYN20-800T,127

TYN20-800T,127

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:40 mA
Rated Average On-State Current:12.7 A
Surge Current Rating:231 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.5@32A V
Repetitive Peak Off-State Current:1 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:32 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

TYN812TRG

TYN812TRG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:15 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

VS-ST300C04L0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:560 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:2.18@1635A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

MOC213M

MOC213M

电气特性 Features

  • 单通道光电晶体管输出光电耦合器,DC直流输入
  • 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-08-14 Tag标签:光电耦合器(光耦)

VS-ST300S20P0PBF

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:300 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.66@940A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

VS-ST1230C14K0P

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1745 A
Surge Current Rating:35100 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.62@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

VS-22RIA10

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:130 mA
Rated Average On-State Current:22 A
Surge Current Rating:420 A
Repetitive Peak Forward Blocking Voltage:100 V
Peak On-State Voltage:1.7@70A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-08-14 Tag标签:可控硅(晶闸管)

FOD814A

电气特性 Features

  • 光电晶体管输出光电耦合器
  • 4-Pin DIP Phototransistor Output Optocoupler
  • Phototransistor Output - AC Sensing Input
光电耦合器(光耦) 更新于 2026-08-14 Tag标签:光电耦合器(光耦)