开关元件

MOCD217M

MOCD217M

电气特性 Features

  • 双通道低输入电流光电晶体管输出光电耦合器
  • 8-Pin SOIC Dual Channel Low Input Current Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-05-04 Tag标签:光电耦合器(光耦)

VS-ST173S12PFP0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:175 A
Surge Current Rating:4900 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.07@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-25RIA20

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:200 V
Maximum Holding Current:130 mA
Rated Average On-State Current:25 A
Surge Current Rating:440 A
Repetitive Peak Forward Blocking Voltage:200 V
Peak On-State Voltage:1.7@79A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-ST1230C16K0LP

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1745 A
Surge Current Rating:35100 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.62@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-VSKL105/04

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:250 mA
Rated Average On-State Current:105 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.8 V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 130 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

TISP4C015L1NR-S

电气特性 Features

  • 可控硅整流器
  • Thyristor TSPD 8V
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-ST110S04P2V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-10TTS08STRRPBF

VS-10TTS08STRRPBF

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:30 mA
Rated Average On-State Current:6.5 A
Surge Current Rating:140 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.15@6.5A V
Repetitive Peak Off-State Current:0.05 mA
Maximum Gate Trigger Voltage:1 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-180RKI80

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:180 A
Surge Current Rating:4000 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.35@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-ST1200C20K1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1650 A
Surge Current Rating:32000 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.73@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

TYN1225RG

TYN1225RG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:50 mA
Rated Average On-State Current:16 A
Surge Current Rating:314 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.6@50A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-ST110S14P0PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

VS-ST1230C16K0L

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1745 A
Surge Current Rating:35100 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.62@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

TPDV840RG

电气特性 Features

Type:TRIAC
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:50 mA
Surge Current Rating:590 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.8@35A V
Repetitive Peak Off-State Current:0.02 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:200 mA
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-04 Tag标签:可控硅(晶闸管)

FODM611

电气特性 Features

  • 高抗干扰,5V,10MBit/秒的逻辑门输出(集电极开路)光电耦合器
  • High Noise Immunity, 5V, 10Mbit/sec Logic Gate Output (Open Collector) Optocoupler
  • High Speed Logic Gate
光电耦合器(光耦) 更新于 2026-05-04 Tag标签:光电耦合器(光耦)