开关元件

VS-ST203C12CFJ0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:370 A
Surge Current Rating:5510 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.72@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-ST303S12PFK0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:300 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-ST083S10PFK0P

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-ST223C08CFL1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:390 A
Surge Current Rating:6130 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.58@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

TYN612MRG

TYN612MRG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:20 mA
Rated Average On-State Current:8 A
Surge Current Rating:125 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-111RKI40PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

FODM2701

电气特性 Features

  • 光电晶体管输出光电耦合器
  • 4-pin Full Pitch MFP Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2025-12-29 Tag标签:光电耦合器(光耦)

VS-ST280CH04C0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:500 A
Surge Current Rating:7500 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.35@1000A V
Repetitive Peak Off-State Current:75 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 150 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

TISP4C125H3BJR-S

TISP4C125H3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:600 mA
Surge Current Rating:30 A
Repetitive Peak Forward Blocking Voltage:100 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-ST1200C20K1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1650 A
Surge Current Rating:32000 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.73@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

TISP8201MDR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:20(Min) mA
Surge Current Rating:11 A
Repetitive Peak Forward Blocking Voltage:120 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Current:5 mA
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

TISP5110H3BJR-S

TISP5110H3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:80 V
Maximum Holding Current:600 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:80 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-ST330S04P0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.52@1000A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-180RKI100

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:180 A
Surge Current Rating:4000 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.35@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)

VS-16TTS12STRRPBF

VS-16TTS12STRRPBF

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:100 mA
Rated Average On-State Current:10 A
Surge Current Rating:200 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.4@10A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2025-12-29 Tag标签:可控硅(晶闸管)