开关元件

TN805-600B-TR

TN805-600B-TR

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:25 mA
Rated Average On-State Current:5 A
Surge Current Rating:73 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@16A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-VSKH230-12PBF

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:500 mA
Rated Average On-State Current:230 A
Surge Current Rating:7850 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.59 V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 130 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-ST180C04C0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:350 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.96@750A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

FOD814

电气特性 Features

  • 光电晶体管输出光电耦合器
  • 4-Pin DIP Phototransistor Output Optocoupler
  • Phototransistor Output - AC Sensing Input
光电耦合器(光耦) 更新于 2026-01-02 Tag标签:光电耦合器(光耦)

VS-ST110S12P0V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-ST303C12LFK1L

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:515 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-VSKH91/04

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:250 mA
Rated Average On-State Current:95 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.73 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-ST180S20P1PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-ST083S10PFP0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

TISP7125F3PS

TISP7125F3PS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:5.7 A
Repetitive Peak Forward Blocking Voltage:100 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-ST330C04L0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.9@1730A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

VS-ST173C12CFK0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:4900 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.07@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

MOC256M

MOC256M

电气特性 Features

  • 光电晶体管输出光电耦合器,AC交流传感输入
  • 8-Pin SOIC AC Input Phototransistor Output Optocoupler
  • Phototransistor Output - AC Sensing Input
光电耦合器(光耦) 更新于 2026-01-02 Tag标签:光电耦合器(光耦)

VS-12TTS08PBF

VS-12TTS08PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:140 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.2@8A V
Repetitive Peak Off-State Current:0.05 mA
Maximum Gate Trigger Voltage:1 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)

TYN20B-600T,118

TYN20B-600T,118

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:40 mA
Rated Average On-State Current:12.7 A
Surge Current Rating:231 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.5@32A V
Repetitive Peak Off-State Current:1 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:32 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-02 Tag标签:可控硅(晶闸管)