开关元件

VS-ST330C16C1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:720 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.96@1810A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

TYN810RG

TYN810RG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:30 mA
Rated Average On-State Current:6.4 A
Surge Current Rating:105 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@20A V
Repetitive Peak Off-State Current:0.01 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:15 mA
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

VS-ST303S04PFL0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:300 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

MOC217M

MOC217M

电气特性 Features

  • 单通道光电晶体管输出光电耦合器,DC直流输入
  • 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-01-12 Tag标签:光电耦合器(光耦)

VS-181RKI100PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:180 A
Surge Current Rating:4000 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.35@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

VS-ST330S08P1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.52@1000A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

VS-ST180S16P0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

VS-ST180S04P1VPBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

TN1205T-600B-TR

TN1205T-600B-TR

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:15 mA
Rated Average On-State Current:8 A
Surge Current Rating:120 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

TPA0234G

电气特性 Features

  • 可控硅整流器
  • SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

VS-VSKH91/10

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:250 mA
Rated Average On-State Current:95 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.73 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

FOD8333

FOD8333

电气特性 Features

  • 输入LED驱动,2.5 A输出电流,IGBT驱动的光电耦合器.带有去饱和检测,隔离故障检测,有源米勒钳位和自动故障复位
  • Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing, Active Miller Clamp, and Automatic Fault Reset
  • IGBT/MOSFET Gate Drivers
光电耦合器(光耦) 更新于 2026-01-12 Tag标签:光电耦合器(光耦)

VS-ST330S16P1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.52@1000A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

VS-ST700C18L1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:910 A
Surge Current Rating:16400 A
Repetitive Peak Forward Blocking Voltage:1800 V
Peak On-State Voltage:1.8@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)

TISP5110H3BJR-S

TISP5110H3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:80 V
Maximum Holding Current:600 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:80 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-12 Tag标签:可控硅(晶闸管)