开关元件

VS-50RIA10

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:200 mA
Rated Average On-State Current:50 A
Surge Current Rating:1490 A
Repetitive Peak Forward Blocking Voltage:100 V
Peak On-State Voltage:1.6@157A V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:100 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-50RIA80

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:200 mA
Rated Average On-State Current:50 A
Surge Current Rating:1490 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@157A V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:100 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-ST083S08PFM1P

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

TISP4C115H3BJR-S

TISP4C115H3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:90 V
Maximum Holding Current:600 mA
Surge Current Rating:30 A
Repetitive Peak Forward Blocking Voltage:90 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-ST083S12PFK0P

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-ST280C04C1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:500 A
Surge Current Rating:8220 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.36@1050A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-16RIA60

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:130 mA
Rated Average On-State Current:16 A
Surge Current Rating:360 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.75@50A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-ST780C04L0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1350 A
Surge Current Rating:25600 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.31@3600A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

TISP7015L1DR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:8 V
Maximum Holding Current:30(Min) mA
Surge Current Rating:9 A
Repetitive Peak Forward Blocking Voltage:8 V
Repetitive Peak Off-State Current:0.004 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-ST173C12CFK0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:4900 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.07@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-111RKI80PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

FOD053L

FOD053L

电气特性 Features

  • 1Mbit/s,3.3V,1kV/us,双通道高速晶体管输出光电耦合器
  • SO8, 1MBIT/S High Speed Dual Channel Transistor- 1kV/us 3.3V
  • Low Voltage, High Performance
光电耦合器(光耦) 更新于 2026-01-15 Tag标签:光电耦合器(光耦)

TYN625RG

TYN625RG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:50 mA
Rated Average On-State Current:16 A
Surge Current Rating:314 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@50A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

VS-ST180S12P0VPBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-01-15 Tag标签:可控硅(晶闸管)

FODM8061

电气特性 Features

  • 高抗干扰,3.3V/5V,10MBit/秒的逻辑门输出(集电极开路)光电耦合器
  • High Noise Immunity, 3.3V/5V, 10Mbit/sec Logic Gate Output (Open Collector) Optocoupler
  • Low Voltage, High Performance
光电耦合器(光耦) 更新于 2026-01-15 Tag标签:光电耦合器(光耦)