IRGIB10B60KD1P

IRGIB10B60KD1P

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:16 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB5B120KDPBF

IRGB5B120KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB4B60KD1PBF

IRGB4B60KD1PBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:11 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB4715DPBF

IRGB4715DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:21 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGB4061DPBF

IRGB4061DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:36 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB10B60KDPBF

IRGB10B60KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:22 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG8P60N120KDPBF

IRG8P60N120KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P60N120KD-EPBF

IRG8P60N120KD-EPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P50N120KDPBF

IRG8P50N120KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P40N120KDPBF

IRG8P40N120KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P40N120KD-EPBF

IRG8P40N120KD-EPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P25N120KDPBF

IRG8P25N120KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P25N120KD-EPBF

IRG8P25N120KD-EPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRG8P15N120KDPBF

IRG8P15N120KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-40 to 150 ℃
Rad Hard:No